MoSe2 modified TiO2 nanotube arrays with superior photoelectrochemical performance

TiO2 nanotube arrays (TNTs) are first prepared by anodization Ti foils in ethylene glycol electrolyte. Then, MoSe2 deposites electrochemically on TNTs. The as-synthesized MoSe2/TiO2 composite has a much higher photocurrent density of 1.07 mA cm(-2) at 0 V than pure TNTs of 0.38 mA cm(-2), which suggests that the MoSe2/TiO2 composite film has optimum photoelectrocatalysis properties. The electron transport resistances of the MoSe2/TiO2 decreases to half of pure TiO2, at 295.6 ohm/cm(2). Both photocurrent-time and Mott-Schottky plots indicate MoSe2 a p-type semiconductor characteristics. MoSe2/TiO2 composite can achieve a maximum 5 orders of magnitude enhancement in carrier density (4.650 x 10 27 cm(-3)) than that of pure TiO2 arrays. It can be attributed to p-n heterojunction formed between MoSe2 and TiO2, and the composite can be potentially applied in photoelectrochemical, photocatalysis fields.