期刊
CRYSTALS
卷 8, 期 1, 页码 -出版社
MDPI AG
DOI: 10.3390/cryst8010027
关键词
GaN; light-emitting diode; light extraction efficiency; FDTD
资金
- Basic Science Research Program through the National Research Foundation of Korea - Ministry of Education [2016R1D1A1B03932092]
- Future Semiconductor Device Technology Development Program - MOTIE [10044735]
- Future Semiconductor Device Technology Development Program - KSRC [10044735]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10044735] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2016R1D1A1B03932092] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Light extraction efficiency (LEE) of GaN-based nanorod blue light-emitting diode (LED) structures is investigated using finite-difference time-domain (FDTD) simulations. When the LEE is calculated for different source positions inside the nanorod, the LEE is found to depend strongly on the source positions and the polarization directions for each source position, implying that the LEE of nanorod LED structures should be evaluated by averaging over source positions and polarization directions for determining the LEE accurately. The averaged LEE of nanorod LED structures is simulated as the radius, the p-GaN thickness, and the n-GaN thickness is varied, and the optimum structural parameters can be obtained. In addition, the far-field pattern is simulated when considering the averaging effects, and the circularly symmetric and uniform emission distribution is obtained.
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