4.7 Article

Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2

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APL MATERIALS
卷 6, 期 2, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.5016866

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资金

  1. Vannevar Bush Faculty Fellowship program by the U.S. Department of Defense [N00014-16-1-2814]
  2. U.S. Army Research Office [W911NF-16-1-0280]
  3. U.S. National Science Foundation [DMR 1531389]
  4. MRSEC Program of the U.S. National Science Foundation [DMR 1720256]
  5. Division Of Materials Research [1531389] Funding Source: National Science Foundation

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Low-temperature magnetotransport studies are reported for (112) Cd3As2 films grown on (111)CdTe by molecular beam epitaxy as a function of the Cd3As2 film thickness. All films show Shubnikov-de Haas oscillations. An even-integer quantum Hall effect is observed for films thinner than 70 nm. For the thinnest films, the bulk is gapped and transport at lowtemperatures occurs only via the gapless, two-dimensional states. The lowest Landau level is reached at similar to 10 T, and the longitudinal resistance nearly vanishes at the plateaus in the Hall resistance. The results are discussed in the context of the current theoretical understanding of topological surface states in threedimensional Dirac semimetals. (c) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.

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