期刊
APL MATERIALS
卷 6, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5004700
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资金
- Office of Basic Energy Sciences, Division of Materials Science through the University of Washington [FA9550-14-1-0277]
- AFOSR Grant through the University of Washington [FA9550-14-1-0277]
- Office of Basic Energy Sciences, U.S. DOE [DE-AC02-05CH11231, DE-AC02-76SF00515]
- National Natural Science Foundation of China [11227902]
- NRF, Korea through Max Planck Korea/POSTECH Research Initiative [2011-0031558]
- Basic Science Research Program [2015R1C1A1A01053065]
- U.S. Department of Energy, Office of Science [DE-AC02-05CH11231]
Monolayer transition metal dichalcogenides (TMDCs) in the 1T' structural phase have drawn a great deal of attention due to the prediction of quantum spin Hall insulator states. The band inversion and the concomitant changes in the band topology induced by the structural distortion from 1T to 1T' phases are well established. However, the bandgap opening due to the strong spin-orbit coupling (SOC) is only verified for 1T'- WTe2 recently and still debated for other TMDCs. Here we report a successful growth of high-quality monolayer 1T'-MoTe2 on a bilayer graphene substrate through molecular beam epitaxy. Using in situ angle-resolved photoemission spectroscopy (ARPES), we have investigated the low-energy electronic structure and Fermi surface topology. The SOC-induced breaking of the band degeneracy points between the valence and conduction bands is clearly observed by ARPES. However, the strength of SOCis found to be insufficient to open a bandgap, which makes monolayer 1T'-MoTe2 on bilayer graphene a semimetal. (c) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
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