期刊
ADVANCED SCIENCE
卷 5, 期 7, 页码 -出版社
WILEY
DOI: 10.1002/advs.201800207
关键词
2D materials; Dirac fermions; field-effect transistors; germanene; scanning tunneling microscopy; transmission electron microscopy
资金
- Australian Research Council (ARC) [DP140102581, DP160102627, DP170101467]
- National Natural Science Foundation of China [21773124, 11575227, 51472016, 51672018]
- Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund [U1501501]
- BUAA-UOW Joint Research Centre Small Grant
- ARC [LE0882813, LE120100104]
- Australian Commonwealth Government
2D Dirac materials supported by nonmetallic substrates are of particular interest due to their significance for the realization of the quantum spin Hall effect and their application in field-effect transistors. Here, monolayer germanene is successfully fabricated on semiconducting germanium film with the support of a Ag(111) substrate. Its linear-like energy-momentum dispersion and large Fermi velocity are derived from the pronounced quasiparticle interference patterns in a root 3 x root 3 superstructure. In addition to Dirac fermion characteristics, the theoretical simulations reveal that the energy gap opens at the Brillouin zone center of the root 3 x root 3 restructured germanene, which is evoked by the symmetry-breaking perturbation potential. These results demonstrate that the germanium nanosheets with root 3 x root 3 germanene can be an ideal platform for fundamental research and for the realization of high-speed and low-energy-consumption field-effect transistors.
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