期刊
ADVANCED SCIENCE
卷 5, 期 6, 页码 -出版社
WILEY
DOI: 10.1002/advs.201800130
关键词
atomic layer deposition; passivation; perovskites; planar perovskite solar cells; SnO2 electron transporting layers
资金
- PFNM-NM, Solaronix, Aubonne, Switzerland [407040_154056, CTI 15864.2]
- National Research Foundation of Korea (NRF) - Korea government [NRF-2017R1D1A1B03034035]
- National Research Foundation [NRF-2017R1D1A1B03028570]
- SNSF [NRP 70]
Planar perovskite solar cells using low-temperature atomic layer deposition (ALD) of the SnO2 electron transporting layer (ETL), with excellent electron extraction and hole-blocking ability, offer significant advantages compared with high-temperature deposition methods. The optical, chemical, and electrical properties of the ALD SnO2 layer and its influence on the device performance are investigated. It is found that surface passivation of SnO2 is essential to reduce charge recombination at the perovskite and ETL interface and show that the fabricated planar perovskite solar cells exhibit high reproducibility, stability, and power conversion efficiency of 20%.
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