期刊
ADVANCED ELECTRONIC MATERIALS
卷 4, 期 9, 页码 -出版社
WILEY
DOI: 10.1002/aelm.201800274
关键词
aluminum (Al) doping; black phosphorus (BP); complementary circuits; heterostructures
资金
- A*STAR Science and Engineering Research Council [152-70-00013]
- National Research Foundation Competitive Research Programs [NRF-CRP15-2015-01, NRF-CRP15-2015-02]
- National Research Foundation, Prime Minister's Office, Singapore under its medium sized center program
- National Research Foundation Fellowship [NRF-NRFF2017-08]
- National University of Singapore startup grant
Black phosphorus (BP) has attracted enormous interest for logic applications due to its unique electronic properties. However, pristine BP exhibits predominant p-type channel conductance, which limits the realization of complementary circuits unless an effective n-type doping is found. Here, a practical approach to transform the conductivity of BP from p-type to n-type via a spatially controlled aluminum (Al) doping is proposed. Symmetrical threshold voltage for the pair of p-type and n-type BP field-effect transistors can be achieved by tuning the Al doping concentration. The complementary inverter circuit shows a clear logic inversion with a high voltage gain of up to approximate to 11 at a supply voltage (V-DD) of 1.5 V. Simultaneously, a high noise margin of 0.27 x V-DD is achieved for both low (NML) and high (NMH) input voltages, indicating excellent noise immunity. Moreover, a three-stage ring oscillator with a theoretical frequency above 1.8 GHz and microwatt level power dissipation is modeled, which shows a low propagation delay per stage. This study demonstrates a practical approach to fabricate high performance complementary integrated circuits on a homogenous BP channel material, paving the way toward complex cascaded circuits and sensor interface applications.
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