4.6 Article

Dimensional Crossover Transport Induced by Substitutional Atomic Doping in SnSe2

期刊

ADVANCED ELECTRONIC MATERIALS
卷 4, 期 4, 页码 -

出版社

WILEY
DOI: 10.1002/aelm.201700563

关键词

2D materials; 2D transport; atomic doping

资金

  1. Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2016R1D1A3B03933785]
  2. National Research Foundation of Korea [NRF-2017K2A9A2A08000214]
  3. Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT, and Future Planning [2015M3D1A1070639]
  4. National Research Foundation of Korea (NRF) [2017R1A2B2005640]
  5. KIST Institution Program [2E27150, 2E28180]
  6. Ministry of Science & ICT (MSIT), Republic of Korea [2E28170] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  7. National Research Foundation of Korea [2015M3D1A1070639, 2017R1A2B2005640] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Substitutional atomic doping is one of the most convenient and precise routes to modulate semiconducting material properties. Although two-dimensional (2D) layered transition metal dichalcogenides (TMDs) are of great interest as a prominent semiconducting material due to their unique physical/chemical properties, such a practical atomic doping is still rare, possibly due to the intrinsic localization nature of conduction paths based on d-band states. Here, using single-crystalline Cl-doped SnSe2, the dimensional crossover in carrier transport accompanied by semiconductor-to-metal transition is reported. Nondoped SnSe2 shows semiconducting transport behavior dominated by 2D variable range hopping conduction, exhibiting relatively strong localization of carriers at low-temperature regions. Moderately electron-doped SnSe2 by substitution on Se with higher valent Cl exhibits superior electrical conductivity even than the heavily doped one owing to the higher electron mobility of the former (167 cm(2) V-1 s(-1) at 2 K). Combined with Raman spectra, temperature dependence of mobility clearly evidences the effective screening of homopolar optical mode phonon compared to typical TMD materials. Detailed characterizations with magnetoresistance behaviors finally demonstrate that the suppression of both homopolar optical mode phonon and carrier localization as retaining low-dimensionality is key for high mobility conduction in electron-doped SnSe2.

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