期刊
2D MATERIALS
卷 5, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aaa104
关键词
tantalum disulfide; phase transition; powder vapor deposition; electronic device
资金
- NSF [EFRI-1433307]
- Emerging Frontiers & Multidisciplinary Activities
- Directorate For Engineering [1433307] Funding Source: National Science Foundation
Tantalum disulfide (TaS2) is a transition metal dichalcogenide (TMD) that exhibits phase transition induced electronic property modulation at low temperature. However, the appropriate phase must be grown to enable the semiconductor/metal transition that is of interest for next generation electronic applications. In this work, we demonstrate direct and controllable synthesis of ultra-thin 1T-TaS2 and 2H-TaS2 on a variety of substrates (sapphire, SiO2/Si, and graphene) via powder vapor deposition. The synthesis process leads to single crystal domains ranging from 20 to 200 nm thick and 1-10 mu m on a side. The TaS2 phase (1T or 2H) is controlled by synthesis temperature, which subsequently is shown to control the electronic properties. Furthermore, this work constitutes the first demonstration of a metal-insulator phase transition in directly synthesized 1T-TaS2 films and domains by electronic means.
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