期刊
2D MATERIALS
卷 5, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aac34c
关键词
lateral junction; PdSe2 bilayer; Pd2Se3 monolayer; conducting nano wire; empty interface states
资金
- Department of Energy [DEFG02-09ER46554]
- McMinn Endowment
- Japan Science and Technology Agency (JST)-ACCEL
- Japan Society for the Promotion of Science (JSPS) KAKENHI [JP16H06333, P16823]
While the exfoliation of almost all layered materials results in a monolayer with the same atomic geometry as its bulk counterpart, the exfoliation of PdSe2 results in a monolayer with a different atomic geometry and a new stoichiometry, Pd2Se3, which is a fusion of two PdSe2 monolayers mediated by Se emission. Here we first report first-principles calculations of lateral junctions between a PdSe2 bilayer and a Pd2Se3 monolayer. We find that, while several distinct junction geometries are possible, they all exhibit empty interface states below the conduction band. As a result, light n-type doping of either or both sides, e.g. by halogen atoms replacing Se atoms, leads to a remotely-doped interface, i.e. a 1D conducting nanowire that runs along the junction, in between the two semiconductors. We have fabricated such junctions inside a scanning transmission electron microscope (STEM), but doping and transport measurements are not currently practical.
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