期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 29, 期 6, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.3659713
关键词
electron beam deposition; silicon compounds; surface charging
资金
- VENI through the Netherlands Organization for Research (NWO-the Hague, the Netherlands)
This paper concentrates on focused electron beam induced deposition of silicon oxide. Silicon oxide pillars are written using 2, 4, 6, 8, 10-pentamethyl-cyclopenta-siloxane (PMCPS) as precursor. It is observed that branching of the pillar occurs above a minimum pillar height. The branching is attributed to charging of the deposit by the electron beam. The branching can be suppressed by introducing water into the chamber together with PMCPS. At the same time, the cointroduction of water results in a higher growth rate, which is found to be specific to PMCPS. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3659713]
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