4.2 Article

Electron beam lithography writing strategies for low loss, high confinement silicon optical waveguides

期刊

出版社

A V S AMER INST PHYSICS
DOI: 10.1116/1.3653266

关键词

-

资金

  1. AFOSR [FA9550-10-1-0053]
  2. DARPA [RA231-G2]
  3. CBET/BISH [0930411]
  4. National Science Foundation (NSF) STC MDITR Center [DMR0120967]
  5. Washington Research Foundation

向作者/读者索取更多资源

The authors present a robust process for fabricating passive silicon photonic components by direct-write electron beam lithography (EBL). Using waveguide transmission loss as a metric, we study the impact of EBL writing parameters on waveguide performance and writing time. As expected, write strategies that reduce sidewall roughness improve waveguide loss and yield. In particular, averaging techniques such as overlap or field shift writing reduce loss, however, the biggest improvement comes from writing using the smaller field-size option of our EBL system. The authors quantify the improvement for each variation and option, along with the tradeoff in writing time. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3653266]

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.2
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据