期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 29, 期 6, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.3644341
关键词
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资金
- Sandia National Laboratories
- United States Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
- Semiconductor Research Corporation [2008-DJ-1884]
- National Science Foundation (NSF) through the Nanoscale Science and Engineering Center [DMR-0832760]
- NSF [DMR-0537588]
- Tokyo Electron America
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [832760] Funding Source: National Science Foundation
This study modifies the authors' previously reported directed self-assembly (DSA) process of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) in order to meet the throughput and material-related requirements of a semiconductor manufacturing environment. It is demonstrated that all of the bottleneck steps in the authors' DSA process, including the deposition of the cross-linkable mat and the deposition of the brush layer, can be done in minutes on a hot plate in an N-2 atmosphere, which simulates the processing environment of a lithography track module. A 25-nm-pitch pattern resulting from a 4:1 density multiplication was demonstrated with a manufacturing-compatible organic solvent. A preliminary uniformity study on 300 mm wafers was also presented. The modified DSA process presents a viable solution to some of the anticipated throughput-related challenges to DSA commercialization and thus, brings integration of DSA within reach of the semiconductor manufacturing industry. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3644341]
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