期刊
NANOMATERIALS
卷 8, 期 3, 页码 -出版社
MDPI
DOI: 10.3390/nano8030151
关键词
Transition metal dichalcogenides; MoS2; field-effect transistor; field emission
类别
资金
- POR Campania FSE [80]
We report the electrical characterization and field emission properties of MoS2 bilayers deposited on a SiO2 /Si substrate. Current-voltage characteristics are measured in the back-gate transistor configuration, with Ti contacts patterned by electron beam lithography. We confirm the n-type character of as-grown MoS2 and we report normally-on field-effect transistors. Local characterization of field emission is performed inside a scanning electron microscope chamber with piezo-controlled tungsten tips working as the anode and the cathode. We demonstrate that an electric field of similar to 200 V/rm is able to extract current from the flat part of MoS 2 bilayers, which can therefore be conveniently exploited for field emission applications even in low field enhancement configurations. We show that a Fowler-Nordheim model, modified to account for electron confinement in two-dimensional (2D) materials, fully describes the emission process.
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