GaN-on-Si For High-Voltage Applications

This work provides an overview of our GaN-on-Si activity for high voltage applications. We will discuss the failure mechanisms of GaN-on-Si devices by electrical characterization and TCAD simulations. The main issues of the use of the Si as substrate are identified and addressed. A breakdown voltage as high as 1050 V and a specific on-resistance as low as 2 mOhm.cm(2) have been achieved.