Atomic Layer Deposition of TiN/Al2O3/TiN nanolaminates for capacitor applications

Atomic layer deposition (ALD) of nanolaminates within porous alumina membranes is a highly promising path to produce high performance capacitors. Such systems have shown their feasibility and their very good properties. However there are still many improvements that should be achieved. TiN/Al2O3/TiN nanolaminates appear to be good candidates for such devices. In this study, the optimized parameters for Al2O3 deposition were determined. The comparison of the chemical composition, crystal structure and morphology of TiN layers grown either by thermal or plasma-enhanced ALD was performed using various method such as TEM, SEM, XPS and electrical characterizations.