期刊
NANOSCALE RESEARCH LETTERS
卷 13, 期 -, 页码 -出版社
SPRINGEROPEN
DOI: 10.1186/s11671-018-2625-z
关键词
G-GaN; Adsorption; Work function; Field emission device; Optical properties; Density functional theory
资金
- National Natural Science Foundation of China [11747032]
- Natural Science Basic Research Plan in Shaanxi Province of China [2017JQ6065]
- Innovation Project of Key Industry Chain in Shaanxi Province [2017ZDCXL-GY-06-01]
- Science and Technology Project of Xi'an [2017080CG/RC043(XALG015)]
- Science Foundation of Guizhou Science and Technology Department [QKHJZ[2015]2150]
- Science Foundation of Guizhou Provincial Education Department [QJHKYZ[2016]092]
The electronic and optical properties of alkali-metal-adsorbed graphene-like gallium nitride (g-GaN) have been investigated using density functional theory. The results denote that alkali-metal-adsorbed g-GaN systems are stable compounds, with the most stable adsorption site being the center of the hexagonal ring. In addition, because of charge transfer from the alkali-metal atom to the host, the g-GaN layer shows clear n-type doping behavior. The adsorption of alkali metal atoms on g-GaN occurs via chemisorption. More importantly, the work function of g-GaN is substantially reduced following the adsorption of alkali-metal atoms. Specifically, the Cs-adsorbed g-GaN system shows an ultralow work function of 0.84 eV, which has great potential application in field-emission devices. In addition, the alkali-metal adsorption can lead to an increase in the static dielectric constant and extend the absorption spectrum of g-GaN.
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