期刊
NANO ENERGY
卷 48, 期 -, 页码 575-581出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nanoen.2018.02.058
关键词
Neuromorphic devices; Memory; Dipole reorientation; Ion migration; Sensitivity
类别
资金
- National Research Foundation of Korea (NRF) - Korea government (Ministry of Science, ICT & Future Planning) [NRF-2016R1A3B1908431]
- Center for Advanced Soft-Electronics - Ministry of Science, ICT and Future Planning as Global Frontier Project [2013M3A6A5073175]
- Creative-Pioneering Researchers Program through Seoul National University (SNU)
- National Science Foundation Graduate Research Fellowship Program - United States government [DGE-114747]
- National Research Foundation of Korea [2013M3A6A5073175, 2016R1A3B1908431] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Emulating essential synaptic working principles using a single electronic device has been an important research field in recent years. However, achieving sensitivity and energy consumption comparable to biological synapses in these electronic devices is still a difficult challenge. Here, we report the fabrication of conjugated polyelectrolyte (CPE)-based artificial synapse, which emulates important synaptic functions such as paired-pulse facilitation (PPF), spike-timing dependent plasticity (STDP) and spiking rate dependent plasticity (SRDP). The device exhibits superior sensitivity to external stimuli andlow-energy consumption. Ultrahigh sensitivity and low-energy consumption are key requirements for building up brain-inspired artificial systems and efficient electronicbiological interface. The excellent synaptic performance originated from (i) a hybrid working mechanism that ensured the realization of both short-term and long-term plasticity in the same device, and (ii) the mobile-ion rich CPE thin film that mediate migration of abundant ions analogous to a synaptic cleft. Development of this type of artificial synapse is both scientifically and technologically important for construction of ultrasensitive highly-energy efficient and soft neuromorphic electronics.
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