期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 62, 期 6, 页码 2482-2489出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2015.2498106
关键词
Defects; diodes; heavy ion testing; heavy ions; radiation effects in devices; radiation effects; radiation hardness assurance testing; radiation hardness assurance; Schottky diodes; semiconductor device radiation effects; silicon; single-event burnout; single-event charge collection; single-event effects
资金
- NASA Electronic Parts and Packaging Program
- NEPP
- Defense Threat Reduction Agency (DTRA)
In this paper, we irradiate a number of silicon power Schottky diodes from a variety of manufacturers. The tested diodes represent a wide assortment of reverse voltages and forward currents. Additionally, we review correlations between single-event failures in Schottky diodes and device electrical parameters. The spatial locations of failures in the diode are discussed, as well as a possible explanation for why the failures occur. Based on these correlations to date, we propose a derating scheme for Schottky diodes flown in a heavy ion environment and suggest screening procedures for decreasing the risks of such failures.
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