期刊
LIGHT-SCIENCE & APPLICATIONS
卷 7, 期 -, 页码 -出版社
CHINESE ACAD SCIENCES, CHANGCHUN INST OPTICS FINE MECHANICS AND PHYSICS
DOI: 10.1038/s41377-018-0008-y
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资金
- National Key RD Program [2016YFB0400100, 2016YFB0400104]
- National Natural Science Foundation of China [61534007, 61404156, 61522407, 61604168, 61775230]
- Key Frontier Scientific Research Program of the Chinese Academy of Sciences [QYZDB-SSW-JSC014]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDA09020401]
- Science and Technology Service Network Initiative of the Chinese Academy of Sciences
- Key R&D Program of Jiangsu Province [BE2017079]
- Natural Science Foundation of Jiangsu Province [BK20160401]
- open fund of the State Key Laboratory of Luminescence and Applications [SKLA-2016-01]
- open fund of the State Key Laboratory on Integrated Optoelectronics [IOSKL2016KF04, IOSKL2016KF07]
Current laser-based display and lighting applications are invariably using blue laser diodes (LDs) grown on free-standing GaN substrates, which are costly and smaller in size compared with other substrate materials.(1-3) Utilizing less expensive and large-diameter Si substrates for hetero-epitaxial growth of indium gallium nitride/gallium nitride (InGaN/GaN) multiple quantum well (MQW) structure can substantially reduce the cost of blue LDs and boost their applications. To obtain a high crystalline quality crack-free GaN thin film on Si for the subsequent growth of a blue laser structure, a hand-shaking structure was formed by inserting Al-composition step down-graded AlN/AlxGa1-xN buffer layers between GaN and Si substrate. Thermal degradation in InGaN/GaN blue MQWs was successfully suppressed with indium-rich clusters eliminated by introducing hydrogen during the growth of GaN quantum barriers (QBs) and lowering the growth temperature for the p-type AlGaN/GaN superlattice optical cladding layer. A continuous-wave (CW) electrically pumped InGaN/GaN quantum well (QW) blue (450 nm) LD grown on Si was successfully demonstrated at room temperature (RT) with a threshold current density of 7.8 kA/cm(2)
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