期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 6, 期 3, 页码 588-597出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7tc04003b
关键词
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资金
- EPSRC [EP/L017709]
- UCL
- NSG (Pilkington Technology Management Limited, European Technical Centre, Hall Lane, Lathom, UK)
- EPSRC [EP/L017709/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/L017709/1] Funding Source: researchfish
Aluminium/gallium co-doped ZnO (AGZO), indium/gallium co-doped ZnO (IGZO), and aluminium/indium co-doped ZnO (AIZO) thin films were synthesised on glass substrates via aerosol assisted chemical vapour deposition (AACVD). The films were fully characterised by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. The optoelectronic properties of the films were determined using UV/vis spectroscopy and Hall effect measurements. The AGZO film displayed the lowest resistivity (1.3 x 10(-2) Omega cm) and highest carrier mobility (7.9 cm(2) V-1 s(-1)), due the relatively low amount of disorder in the structure. The incorporation of In3+ resulted in the most disorder in the structure due to its large radius, which led to an increase in optical absorption, and a decrease in resistivity.
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