4.6 Article

Laser floating zone growth of improper geometric ferroelectric GdInO3 single crystals with Z(6) topological defects

期刊

JOURNAL OF MATERIALS CHEMISTRY C
卷 6, 期 26, 页码 7024-7029

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c8tc01664j

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资金

  1. China Scholarship Council [201506220060]
  2. National Natural Science Foundation of China [51321091, 51323002]
  3. National Key Research and Development Program of China [2016YFB1102201]
  4. Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4413]
  5. ORNL Post Doctoral Development Fund by UT-Battelle, LLC
  6. U.S. Department of Energy [DE-AC05-00OR22725]

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We report the first single crystal growth of GdInO3 using a laser floating zone furnace. The crystals were studied using single crystal/powder X-ray diffraction, magnetic susceptibility, piezoresponse force microscopy, and polarization switching techniques. The successful growth of single crystal GdInO3 will (i) promote deep understanding of this material, including the mechanism of geometric ferroelectricity and the Z(6) vortex topological defect domain structures, and (ii) provide rich opportunities as a substrate for thin film growth, for example, for important ferroelectric and/or multiferroic materials.

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