期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 6, 期 26, 页码 7077-7084出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8tc02139b
关键词
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资金
- National Natural Science Foundation of China [51672180, 51622306, 21673151]
- China Postdoctoral Science Foundation [2016M601880, 2017T100396]
- Qing Lan Project, 111 project
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
Two-dimensional (2D) MoS2 has important applications in the fields of photodetection, photovoltaics, and light-emitting diodes (LEDs) due to its superior electronic and optoelectronic properties. However, the planar thin-layered MoS2 usually suffers from low light-absorbing ability because of the short transmission path of incident light, which limits the photoelectric conversion quantum efficiency of the thin-layered MoS2-based photodetectors. Herein, we demonstrate a high-performance ZnO-MoS2 core-shell nanopillar (NP) array-based photodetector by depositing thin-layered MoS2 on ZnO NP arrays via magnetron sputtering. With the aid of the ZnO NP arrays, which show a strong light trapping effect, the light-absorbing ability of thin-layered MoS2 is greatly enhanced. As a result, the ZnO-MoS2 core-shell NP array-based photodetector exhibits a broadband response spanning from the ultraviolet (UV) to the visible and to the near-infrared (NIR) light region. Compared with the ZnO-MoS2 planar hetero-junction, the photocurrent of the NP array-based photodetector under illumination is improved by up to 60 times. Our work opens up new opportunities for the development of high-performance, broadband photodetectors based on 2D semiconductor materials.
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