期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 14, 期 6, 页码 1068-1082出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2015.2469647
关键词
Graphene; graphene nano-ribbon; GNRFET; transistor; SPICE; model
类别
资金
- NSF [CCF 07-46608]
This paper presents the first parameterized SPICE-compatible compact model of a graphene nano-ribbon field-effect transistor (GNRFET) with doped reservoirs, also known as MOS-type GNRFET. The current and charge models closely match numerical TCAD simulations. In addition, process variation in transistor dimension, line edge roughness, and doping level in the reservoirs are accurately modeled. Our model provides a means to analyze delay and power of graphene-based circuits under process variation, and offers design and fabrication insights for graphene circuits in the future. We show that line edge roughness severely degrades the advantages of GNRFET circuits; however, GNRFET is still a good candidate for low-power applications.
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