期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 8, 期 2, 页码 456-464出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2018.2793762
关键词
Amorphous silicon; band-to-band (B2B) tunneling; fundamentals; heterojunctions; inversion-layer; simulation; selectivity; trap-assisted tunneling (TAT)
资金
- European Project Disc under the European Union's Horizon 2020 Research and Innovation Program [727529]
- German Federal Ministry for Economic Affairs and Energy [0324141]
The applicability of different high (low) work function contact materials for the formation of alternative passivating and hole (electron) selective contacts is currently re-explored for silicon solar cells. To assist the engineering of those contacts, which is still in its infancy, numerical device simulations are used to improve knowledge regarding relevant heterojunction and thin film properties with the focus on metal oxide based hole contacts. The importance of 1) a high metal oxide work function for the induced c-Si pn-junction is shown. It is elucidated that for an efficient hole transport from this induced c-Si junction into the external electrode, via the buffer and the metal oxide, 2) the metal oxide's conduction band must be below the valence band of the buffer (or c-Si absorber) for direct band-to-band tunneling, or 3) bulk traps near the valence band edge of the buffer (or c-Si absorber) are needed for trap-assisted tunneling.
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