期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 8, 期 2, 页码 541-546出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2017.2783844
关键词
Laser power converter (LPC); leakage current; monolithic interconnected modules (MIM); multisegment photovoltaic (PV); photo-induced conductivity; photo-induced shunt; semi-insulating substrate
资金
- Slovenian Research Agency [P2-0197]
This paper describes the influence of an irradiance-dependent photo-induced leakage current through a semi-insulating GaAs substrate on the performance of photovoltaic monolithically series-interconnected multisegment laser power converters. A reciprocal relation between the resistivity of a semi-insulating GaAs substrate and irradiance of monochromatic light is experimentally observed. A reduced resistivity of the substrate with an increasing irradiation results in a substantial increase of a leakage current through the semi-insulating GaAs substrate between adjacent segments. For a multisegment laser power converter, this photo-induced leakage current is identified as a major shunting mechanism between adjacent segments that arises under high irradiances. Open-circuit voltage V-oc, fill factor (FF), and consequently conversion efficiency of a multisegment laser power converters are highly affected by the shunting mechanism. Based on a shading experiment, we observed that V-oc drops up to 21.5mV per segment at a short-circuit current density J(sc) = 47.3A/cm(2) for the studied six-segment MIM specimen. For the same device, FF drops by 4.1% absolute at J(sc) = 40.5A/cm(2). For the two-segment specimen, 5.8 mV drop of V-oc per segment and 1.5% absolute drop in FF is reported at J(sc) = 47.3 and 43.7A/cm(2), respectively.
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