Full-Scale Self-Emissive Blue and Green Microdisplays Based on GaN Micro-LED Arrays

Micro-size light emitting diode (mu LED) arrays based on III-nitride semiconductors have emerged as a promising technology for a wide range of applications. If InGaN mu LED arrays can be integrated on to Si complementary metal-oxide-semiconductor (CMOS) substrates for active driving, these devices could play crucial roles in ultra-portable products such as next generation pico-projectors, as well as in emerging fields such as biophotonics and optogenetics. Here we present a demonstration of, and methods for, creating a high-resolution solid-state self-emissive microdisplay based on InGaN/GaN semiconductors. An energy efficient active drive scheme is accomplished by integrating micro-emitter arrays with CMOS active matrix drivers that are flip-chip bonded together via indium metal bumps.