期刊
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
卷 7, 期 7, 页码 Q3183-Q3188出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0281807jss
关键词
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资金
- Ministry of Science and Technology [MOST 106-2221-E-006-178, MOST 105-2221-E-006-118]
- Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan
- Advanced Optoelectronic Technology Center, National Cheng Kung University from the Ministry of Education
In this article, we display the fabrication methods and characterizations of the ITO/TiO2/Pt resistive random access memory (RRAM). By transmission electron microscopy (TEM) analysis, the fabricated TiO2 thin film of our RRAM device was confirmed to be amorphous instead of other common crystal direction. The RRAM here shows bipolar resistive switching characteristic for over a hundred times switching cycles with a resistance ratio (R-HRS/R-LRS) of more than 1 order and high stable retention characteristic for over 10(4) seconds with a resistance ratio (R-HRS/R-LRS) of around 2 orders. We found that conduction mechanism was dominated only by ohmic conduction in both set and reset procedure. The set and reset voltage of the ITO/amorphous TiO2 (a-TiO2)/Pt of this article were around 0.6 and -0.5 V, make it state-of-the-art in low operation voltage application. (C) The Author(s) 2018. Published by ECS.
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