相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Separation of III-N/SiC Epitaxial Heterostructure from a Si Substrate and their Transfer to other Substrate Types
S. A. Kukushkin et al.
SEMICONDUCTORS (2017)
Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN
S. A. Kukushkin et al.
PHYSICS OF THE SOLID STATE (2015)
Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films
S. A. Kukushkin et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2014)
Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review
S. A. Kukushkin et al.
PHYSICS OF THE SOLID STATE (2014)
Porous silicon layers prepared by electrochemical etching for application in silicon thin film solar cells
R. S. Dubey et al.
SUPERLATTICES AND MICROSTRUCTURES (2011)
分享论文
