Properties of SiC Films Obtained by the Method of Substitution of Atoms on Porous Silicon

The paper is devoted to the growth of thin SiC films by the method of substitution of atoms on macro-and mesoporous substrates of p-and n-type silicon of (100) orientation. On the mesoporous Si (100) substrates polycrystalline 3C-SiC films were formed, the crystallite size determined from XRD patterns was 27.5 nm. The obtained structures are studied by the methods of scanning electron and atomic-force microscopy, micro-Raman spectroscopy and X-ray diffraction analysis. (C) 2018 The Electrochemical Society.