期刊
IEEE TRANSACTIONS ON MAGNETICS
卷 51, 期 10, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2015.2457393
关键词
Half-metallic ferromagnets; magnetic anisotropy; magnetic materials; spintronics
资金
- Engineering and Physical Sciences Research Council [EP/K03278X/1, EP/M02458X/1]
- EU-FP7 Program [NMP3-SL-2013-604398]
- Precursory Research for Embryonic Science and Technology-Japan Science and Technology (JST) Agency
- Division of Electrical, Communications and Cyber Systems through National Science Foundation (NSF) [ECCS-1102092, ECCS-1508873]
- Division of Materials Research through NSF Grant [DMR-1124601]
- U.S. Office of Naval Research [N000141310754]
- ASPIMATT JST
- New Energy and Industrial Technology Development Organization through Development of an Infrastructure for Normally-Off Computing Technology Project.
- EPSRC [EP/K03278X/1, EP/M02458X/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/M02458X/1, EP/K03278X/1] Funding Source: researchfish
- Direct For Mathematical & Physical Scien [1124601] Funding Source: National Science Foundation
- Division Of Materials Research [1124601] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1508873] Funding Source: National Science Foundation
The Technical Committee of the IEEE Magnetics Society has selected seven research topics to develop their roadmaps, where major developments should be listed alongside expected timelines: 1) hard disk drives; 2) magnetic random access memories; 3) domain-wall devices; 4) permanent magnets; 5) sensors and actuators; 6) magnetic materials; and 7) organic devices. Among them, magnetic materials for spintronic devices have been surveyed as the first exercise. In this roadmap exercise, we have targeted magnetic tunnel and spin-valve junctions as spintronic devices. These can be used, for example, as a cell for a magnetic random access memory and a spin-torque oscillator in their vertical form as well as a spin transistor and a spin Hall device in their lateral form. In these devices, the critical role of magnetic materials is to inject spin-polarized electrons efficiently into a nonmagnet. We have accordingly identified two key properties to be achieved by developing new magnetic materials for future spintronic devices: 1) half-metallicity at room temperature (RT) and 2) perpendicular anisotropy in nanoscale devices at RT. For the first property, five major magnetic materials are selected for their evaluation for future magnetic/spintronic device applications: 1) Heusler alloys; 2) ferrites; 3) rutiles; 4) perovskites; and 5) dilute magnetic semiconductors. These alloys have been reported or predicted to be half-metallic ferromagnets at RT. They possess a bandgap at the Fermi level E-F only for its minority spins, achieving 100% spin polarization at EF. We have also evaluated L1(0) alloys and D0(22)-Mn alloys for the development of a perpendicularly anisotropic ferromagnet with large spin polarization. We have listed several key milestones for each material on their functionality improvements, property achievements, device implementations, and interdisciplinary applications within 35 years time scale. The individual analyses and the projections are discussed in the following sections.
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