4.6 Article

Mechanical Terahertz Modulation Based on Single-Layered Graphene

期刊

ADVANCED OPTICAL MATERIALS
卷 6, 期 7, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201700877

关键词

Fermi velocity; graphene; mechanical strain; modulators; terahertz devices

资金

  1. National Natural Science Foundation of China (NSFC) [U1532155, 11574316, 11604202]
  2. National Key Research and Development Program of China [2017YFA0303603, 2016YFA0401803]
  3. Key Research Program of Frontier Sciences, CAS [QYZDB-SSW-SLH011]
  4. Innovative Program of Development Foundation of Hefei Center for Physical Science and Technology [2016FXCX002]
  5. Instrument Developing Project of the Chinese Academy of Sciences [YZ201423]
  6. Hefei Science Center CAS [2016HSC-IU006]
  7. One Thousand Youth Talents Program of China
  8. Shanghai Institutions of Higher Learning [QD2015020]

向作者/读者索取更多资源

The 2D terahertz (THz) modulator, enabling efficient manipulation of such versatile band in nanoscale, is crucial for THz microdevices and systems, but its implementation is difficult and remains challenging in practice. Here, a novel 2D THz modulator based on single-layered graphene under mechanical strain is demonstrated. Bidirectional, i.e., both positive and negative, THz modulation effect is realized by utilizing unconventionally distributed strains on graphene. Such mechanical modulation is found to be stable and reversible, and its modulation depth can exceed 26% at 1 THz under 10(-2) GPa strain. Observations of both the strain and frequency dependent modulation behavior evidence the mechanical strain-induced change of the Dirac-like energy dispersion in graphene, which is distinctive from that of the electrical and optical approaches. Due to the reliability and wide applicability of mechanical forces, these results provide an alternative route for chip-scale THz modulation devices based on 2D materials.

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