4.3 Article

High-performance solar-blind photodetector with graphene and nitrogen-doped reduced graphene oxide quantum dots (rGOQDs)

期刊

MATERIALS EXPRESS
卷 8, 期 1, 页码 105-111

出版社

AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/mex.2018.1410

关键词

rGOQDs; Graphene; Photodetector; UV; Capping Layer

资金

  1. Fundamental and Advanced Research Project (Key Program) of ChongQing Municipality [cstc2015jcyjBX0046]
  2. National Natural Science Foundation of China (NSFC) [11574308, 61705229, 51402291]
  3. CAS Western Light Program
  4. Basic Scientific Research Program of Chongqing Science and Technology Commission [Cstc2016jcyjA0314]
  5. Hundred-Talent Program of Chinese Academy of Sciences

向作者/读者索取更多资源

Hybrid photodetector of graphene and reduced graphene oxide quantum dots (rGOQDs) is promising for deep-UV photodetection. However, these photodetectors are usually suffered from long response time and vacuum-required measurement environment. In this study, nitrogen-doped rGOQDs were synthesized by the improved Hummers method and DMF hydrothermal treatment approach, while DMF was used as a reducing reagent to enhance the photoresponse of rGOQDs. Hybrid photodetector with rGOQDs on graphene was fabricated using Al2O3, as capping layer. High photoresponsivity of 2.1 x 10(6) V/W and response time of 0.13 s were obtained at deep-UV under ambient environment, and enhanced photoresponse was observed in solar-blind wavelength compared to normal UV light. Furthermore, the integration of rGOQDs made a great improvement for graphene transistor characteristics, with a 5-fold mobility improvement and a shift of Dirac point of 50 V. This paper provide a feasible way for the fabrication of solar-blind photodetectors with high responsivity, fast response time and ambient condition performance, which are important for the community of photodetection.

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