期刊
AIP ADVANCES
卷 8, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5007197
关键词
-
资金
- National Natural Science Foundation of China (NSFC) [61521064, 61322408, 61422407, 61522408, 61574169, 61334007, 61474136, 61574166, 61376112]
- Ministry of Science and Technology of China [2016YFA0201803, 2016YFA0203800, 2017YFB0405603]
- Key Research Program of Frontier Sciences of Chinese Academy of Sciences [QYZDB-SSW-JSC048, QYZDY-SSW-JSC001]
- Beijing Training Project for the Leading Talents in S T [Z151100000315008]
- Opening Project of the Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences
- Young Scholars Program of Shandong University [2015WLJH36]
- State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-sen University)
beta-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of beta-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/beta-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current-voltage and capacitance-voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Phi(b0) increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height (Phi) over bar (b0) = 1.27 V and zero-bias standard deviation sigma (0) = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A.cm(-2).K-2, which is close to the theoretical value of 41.11 A.cm(-2).K-2. The differences between the barrier heights determined using the capacitance-voltage and current-voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity. (c) 2018 Author(s).
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据