4.4 Article

MoS2 solid-lubricating film fabricated by atomic layer deposition on Si substrate

期刊

AIP ADVANCES
卷 8, 期 4, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.5021051

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资金

  1. Natural Science Funds for Distinguished Young Scholar of Jiangsu Province [BK20170023]
  2. National Natural Science Foundation of China [51675360, 51675502, 51775105, 51775001, 51775530, 51775051]
  3. Fundamental Research Funds for the Central Universities [3202006301, 3202006403]
  4. Qing Lan Project of Jiangsu Province
  5. International Foundation for Science, Stockholm, Sweden
  6. Organization for the Prohibition of Chemical Weapons, The Hague, Netherlands [F/4736-2]
  7. Top 6 High-Level Talents Program of Jiangsu Province [2017-GDZB-006]
  8. Natural Science Foundation of Jiangsu Province [BK20150505]
  9. Tribology Science Fund of State Key Laboratory of Tribology [SKLTKF15A11]
  10. Open Research Fund of State Key Laboratory of High Performance Complex Manufacturing, Central South University [Kfkt2016-11]
  11. Scientific Research Foundation of Graduate School of Southeast University [YBPY1703]
  12. Open Research Fund of State Key Laboratory of solid lubrication

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How to reduce friction for improving efficiency in the usage of energy is a constant challenge. Layered material like MoS2 has long been recognized as an effective surface lubricant. Due to low interfacial shear strengths, MoS2 is endowed with nominal frictional coefficient. In this work, MoS2 solid-lubricating film was directly grown by atomic layer deposition (ALD) on Si substrate using MoCl5 and H2S. Various methods were used to observe the grown MoS2 film. Moreover, nanotribological properties of the film were observed by an atomic force microscope (AFM). Results show that MoS2 film can effectively reduce the friction force by about 30-45% under different loads, indicating the huge application value of the film as a solid lubricant. Besides the interlayer-interfaces-sliding, the smaller capillary is another reason why the grown MoS2 film has smaller friction force than that of Si. (C) 2018 Author(s).

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