期刊
SCIENTIFIC REPORTS
卷 8, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-018-25106-3
关键词
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资金
- RIA [H2020-ICT-2014-1, TransFlexTeg-645241]
- ERC-CoG, CapTherPV [647596]
- FEDER funds through the COMPETE Program
- National Funds through FCT - Portuguese Foundation for Science and Technology [UID/CTM/50025/2013]
- European Research Council (ERC) [647596] Funding Source: European Research Council (ERC)
Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials - a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of Cul have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (sigma = 1.1 x 10(4) Sm-1) and thermoelectric properties (ZT= 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.
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