期刊
RSC ADVANCES
卷 8, 期 12, 页码 6341-6345出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8ra00523k
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资金
- National Natural Science Foundation of China [61574026, 11675198]
- National Key RD Plan [2016YFB0400600, 2016YFB0400601]
- Fundamental Research Funds for the Central Universities [DUT15LK15, DUT15RC(3)016, DUT16LK29]
- Liaoning Provincial Natural Science Foundation of China [201602453, 201602176]
- China Postdoctoral Science Foundation [2016M591434]
A Schottky barrier diode (SBD) solar-blind photodetector was fabricated based on the single crystal beta-Ga2O3. Cu and Ti/Au were deposited on the top and bottom surface of Ga2O3 as Schottky and ohmic contacts, respectively. The SBD exhibits a higher rectification ratio of up to 5 x 10(7) at +/- 2 V. The photoresponse spectra show a maximum responsivity at 241 nm and a cutoff wavelength of 256 nm. The solar-blind/ultraviolet and solar-blind/visible rejection ratio can reach a high level of up to 200 and 1000, respectively. It is interesting that the device has a clear response to the solar-blind wavelength at zero bias, which confirms it can be used as a self-powered solar-blind photodetector.
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