期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 62, 期 2, 页码 316-323出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2356172
关键词
Oxide trap; power MOSFET; reliability; silicon carbide (SiC); threshold voltage
A review of the basic mechanisms affecting the stability of the threshold voltage in response to a bias-temperature stress is presented in terms of the charging and activation of near-interfacial oxide traps. An activation energy of approximately 1.1 eV was calculated based on new experimental results. Implications of these factors, including the recovery of some bias-temperature stress-activated defects, for improved device reliability testing are discussed.
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