期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 62, 期 12, 页码 4022-4028出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2015.2492421
关键词
1-selector-1-resistor (1S1R); 1-transistor-1-resistor (1T1R); compact model; conductive filament (CF); cross-point array; resistive random access memory (RRAM); resistive switching; selector; variations
资金
- Division of Computing and Communication Foundations through the National Science Foundation [1449653]
- Direct For Computer & Info Scie & Enginr
- Division of Computing and Communication Foundations [1449653] Funding Source: National Science Foundation
In this paper, we present a compact model for metal-oxide-based resistive random access memory (RRAM) devices with bipolar switching characteristics. The switching mechanism relies on the dynamics of conductive filament growth/dissolution in the oxide layer. Besides the dc and pulsed I-V characteristics, the model also captures the RRAM retention property and the temperature dynamics. The model parameters and the device variations are calibrated from the experimental data of IMEC HfOx-based RRAM devices. The model has been implemented in Verilog-A, which can be easily adapted into the SPICE simulator for the circuit-level analysis. As case studies, we demonstrate the model's applications on the programming scheme design of the 1-transistor-1-resistor array, as well as the design space exploration of the 1-selector-1-resistor cross-point array toward megabit-level.
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