期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 62, 期 9, 页码 2900-2905出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2015.2458987
关键词
Crystallization; electronic structure; indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs); oxide semiconductor; reliability
资金
- Ministry of Science, ICT and Future Planning, Korea, through the IT Consilience Creative Program [IITP-2015-R0346-15-1008]
- Dongguk University through the Dongguk University Research Fund
- Ministry of Public Safety & Security (MPSS), Republic of Korea [R0346-15-1008] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [22A20130000037] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We investigate the effect of crystalline indium-gallium-zinc-oxide (c-IGZO) thin films on device performance, and evaluate the device reliability of c-IGZO under positive/negative bias stress with/without illumination. The crystal structure of deposited-IGZO thin film is controlled by annealing temperatures, and the transition from an amorphous to a crystalline structure is observed at above 800 degrees C. Even though the c-IGZO thin-film transistors (TFTs) exhibit lower carrier mobility, compared with amorphous IGZO (a-IGZO) TFTs, the remarkable improvement of the device reliability for the c-IGZO TFTs is observed especially under the bias stress with illumination. This comes from lower defect density compared with the a-IGZO film.
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