期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 62, 期 11, 页码 3482-3489出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2015.2476825
关键词
Conductive-bridge random-access memory (CBRAM); Data Retention; Forming; kinetic Monte Carlo (KMC) modeling; resistive memory; resistive RAM; SET; transition-state theory (TST)
In this paper, we investigate in depth Forming, SET, and Retention of conductive-bridge random-access memory (CBRAM). A kinetic Monte Carlo model of the CBRAM has been developed considering ionic hopping and chemical reaction dynamics. Based on inputs from ab ini t io calculations and the physical properties of the materials, the model offers the simulation of both the Forming/SET and the Data Retention operations. It aims to create a bond between the physics at atomic level and the device behavior. From the model and experimental results obtained on decananometric devices, we propose an understanding of the physical mechanisms involved in the CBRAM operations. Using the consistent Forming/SET and Data Retention model, we obtained good agreement with the experimental data. Finally, the impact of each layer of the CBRAM on the Forming/SET behavior is decorrelated, allowing an optimization of the performance.
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