期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 62, 期 9, 页码 3056-3060出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2015.2451618
关键词
FET logic devices; magnetoresistance; spin-FET; spin-polarized transport
资金
- National Research Foundation of Korea through the Korean Government within the Ministry of Science, ICT and Future Planning [2010-0017457]
- Korea Institute of Science and Technology (KIST), Seoul, Korea
- Korea University-KIST Institutional Programs
- Ministry of Science, ICT & Future Planning, Republic of Korea [2E25450] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2010-0017457] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The spin-FET has been realized using a semiconductor channel, but two complementary transistors analogous to n- and p-type of the conventional charge transistors have not yet been developed. We propose a complementary logic device consisting of two types of devices, namely, parallel and antiparallel spin transistors, in which the alignments of the magnetization directions of the source and the drain electrodes are parallel or antiparallel, respectively. Only one of the two transistors is conducting at a given gate voltage. An assessment of the feasibility was carried out by performing logic gate simulations based on the experimental spin transistor parameters.
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