期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 62, 期 2, 页码 659-665出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2377632
关键词
Anisotropic bands; MOSFETs; phosphorene; scaling limit; transport crystalline direction
资金
- National Science Foundation [ECCS-0846563, DMR-1124894]
- Office of Naval Research, Arlington, VA, USA
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1124894] Funding Source: National Science Foundation
The ultimate scaling limit and device physics of aggressively scaled phosphorene MOSFETs are examined by self-consistent multiscale quantum transport simulations. The MOSFET structure can effectively suppress the ambipolar conduction and decrease the leakage current, and thereby, is more scalable than the Schottky barrier FET structure. The interplay of quantum mechanical effects and highly anisotropic band structure plays a critical role for phosphorene transistors with a sub 10-nm channel length, in which the optimum choice of the transport crystalline direction is completely different from phosphorene FETs with a longer channel length. Even at a sub-10-nm channel length with considerable quantum tunneling effects, the anisotropic band structure still provides a better device performance in terms of ON-current over other 2-D semiconductors with nearly isotropic band structures, such as MoS2. With the optimum choice of the transport direction, both n- and p-type phosphorene FETs meet the International Technology Roadmap for Semiconductor (ITRS) target at the 5-nm technology node.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据