期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 62, 期 8, 页码 2470-2474出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2015.2446956
关键词
Bipolar magnetic junction transistors (MJTs); charge transport; lifetime; magnetic semiconductors; p-n heterojunctions; spintronics
资金
- National Science Foundation (NSF) [DMR-1305666]
- NSF [DMR-1121262]
- U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]
- China Scholarship Council [201306160050]
Previously, the p-n-p bipolar magnetic junction transistor was demonstrated using a magnetic semiconductor InMnAs as the collector. A current gain beta(dc) as high as 20 of the transistor is observed at 300 K. A negative magnetoamplification of -150% is obtained when the applied magnetic field is 8 T. In order to assess the gain mechanism for such transistors, we measured the minority carrier lifetime in a p-n InMnAs/InAs heterojunction diode. A minority carrier lifetime of 320 ns was obtained at room temperature. For the p-n-p MJT, a decrease in the emitter injection efficiency with the magnetic field is observed for the various base currents, which is attributed to the positive magnetoresistance of the p-type InMnAs. The emitter injection efficiency decreases with the magnetic field leading to the observed negative magnetic amplification.
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