期刊
NATURE COMMUNICATIONS
卷 9, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41467-018-04395-2
关键词
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资金
- US Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Materials Science and Engineering [DE-FG02-07ER46383]
- National Science Foundation [EFMA-1542747]
- Ministry of Science and Technology of Taiwan [104-2112-M-002-013-MY3]
- Center of Atomic Initiative for New Materials, National Taiwan University
- Director, Office of Science, Office of Basic Energy Sciences, of the US Department of Energy [DE-AC02-05CH11231]
- Thematic Project
- Directorate For Engineering
- Emerging Frontiers & Multidisciplinary Activities [1542747] Funding Source: National Science Foundation
Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum-spin-Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe2 single layer with the 1T' structure that does not exist in the bulk form of WSe2. Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we observe a gap of 129 meV in the 1T' layer and an in-gap edge state located near the layer boundary. The system's 2D TI characters are confirmed by first-principles calculations. The observed gap diminishes with doping by Rb adsorption, ultimately leading to an insulator-semimetal transition. The discovery of this large-gap 2D TI with a tunable band gap opens up opportunities for developing advanced nanoscale systems and quantum devices.
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