期刊
LASER TECHNOLOGY FOR DEFENSE AND SECURITY VIII
卷 8381, 期 -, 页码 -出版社
SPIE-INT SOC OPTICAL ENGINEERING
DOI: 10.1117/12.918764
关键词
k.p method; Type-II Quantum Well; Laser diode; Mid-infrared; optical gain
Different type-II InGaAs/GaAsSb quantum well design structures on InP substrate for mid-infrared emission has been modeled by six band k . p method. The dispersion relations, optical matrix element, optical gain and spontaneous emission rate are calculated. The effects of the parameters of quantum wells (thickness, composition) and properties of cladding layers were investigated. For injected carrier concentration of 5x10(12) cm(-2), peak gain values around 2.6-2.7 mu m wavelengths of the order of 1000 cm(-1) can be achieved, which shows that type-II InGaAs/GaAsSb quantum wells are suitable for infrared laser operation beyond 2 mu m at room temperature.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据