期刊
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 6
卷 9, 期 6, 页码 1450-1453出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssc.201100665
关键词
boron nitride; NEXAFS; silicon; ultra-thin film
资金
- Photon Factory Program Advisory Committee [2003G253]
Chemical vapor deposition is employed to form hexagonal boron nitride (h-BN) monolayer films on Si(111) with a borazine precursor. The electronic structure and orientation of the films are analyzed by near edge X-ray absorption fine structure (NEXAFS) spectroscopy and X-ray photoelectron spectroscopy (XPS). XPS analysis shows that monolayer-level stoichiometric BN films were formed. The B K-edge NEXAFS spectra show two discrete peaks that have graphite-like polarization dependence in the low-energy region. Polarization dependence analysis of the NEXAFS indicates that the BN films had two-dimensional orientation on the Si(111) substrate. Based on the density functional theory calculations, these discrete peaks are assigned to pi* peaks at an intact h-BN site and edge B-H site. Comparison with the electronic structures of bulk h-BN and h-BN/Ni(111) clarifies that the interaction between the BN layer and Si substrate was very small. This indicates that the h-BN monolayer was physisorbed on Si(111), making a steep interface and conserving the intrinsic electronic structure.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据