Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices

A comparative study of the electrical and interface characteristics for on GaN MOS capacitors with as-deposited and post-annealed Al2O3 gate dielectric, deposited via atomic layer deposition (ALD), has been performed to gain insight into the effects of annealing on the MOS interface properties. Comparison is also made to an annealed 65nm PECVD SiO2 gate dielectric. We have performed C-V and conductance spectroscopy measurements, demonstrating annealing provides a significant reduction in deep interface traps accompanied by a slight increase in shallow traps. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim