期刊
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
卷 62, 期 3, 页码 891-898出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSI.2014.2373674
关键词
Generic model; memristive devices; memristor; parasitic components; pinched hysteresis loop
资金
- U.S. Air Force [FA9550-13-1-0136]
- National Research Foundation of Korea (NRF) - Korean government [2013R1A2A2A01068683, 2012R1A1A2044078]
- EC
- National Research Foundation of Korea [2013R1A2A2A01068683, 2012R1A1A2044078] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this paper, a generic model of memristive systems, which can emulate the behavior of real memristive devices is proposed. Non-ideal pinched hysteresis loops are sometimes observed in real memristive devices. For example, the hysteresis loops may deviate from the origin over a broad range of amplitude and frequency of the input signal. This deviation from the ideal case is often caused by parasitic circuit elements exhibited by real memristive devices. In this paper, we propose a generic memristive circuit model by adding four parasitic circuit elements, namely, a small capacitance, a small inductance, a small DC current source, and a small DC voltage source, to the memristive device. The adequacy of this model is verified experimentally and numerically with two thermistors (NTC and PTC) memristors.
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