期刊
DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV
卷 725, 期 -, 页码 15-18出版社
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.725.15
关键词
Photoluminescence; Photoluminescence imaging microscopy; Frank-type defect
Frank-type defects on a basal plane have been investigated using photoluminescence (PL) imaging microscopy and wavelength profile measurement. A wide range of emission in wavelength (>650nm) was observed from a Frank partial dislocation at the edge of the defect, while a narrow emission at around the visible light range was obtained from a stacking fault region. The emissions from a stacking fault region of three kinds of basal plane Frank-type defects were confirmed to have different wavelengths depending on their stacking structures.
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